황현상 교수 연구실 (16.07)

admin | 2016.07.11 15:59 | 조회 187




Abstract

In this letter, we demonstrate a steep slope field-effect
transistor (FET) using a threshold switching (TS) device.
The Ag/TiO2-based TS device reported in our previous work
was implemented in series with the drain region of a transistor.
Since the TS device has an abrupt transition between the
OFF- and ON-states and vice versa, the transistor has
a 5-mV/decade subthreshold slope and a high ON/OFF-current
ratio (I_ON/I_OFF) of >10^7 with a low drain voltage (0.3 V).
Furthermore, the threshold voltage (Vth,FET) of the transistor
can be tuned by controlling the thickness of the TS device.

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