조문호 교수 연구실 (15.07)

admin | 2016.07.11 15:59 | 조회 116




Abstract

 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits. 


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Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal 
Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

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